| 1. Identity statement | ||||
| Reference Type | Journal Article | |||
| Site | mtc-m21c.sid.inpe.br | |||
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S | |||
| Identifier | 8JMKD3MGP3W34R/3RTBQ48 | |||
| Repository | sid.inpe.br/mtc-m21c/2018/09.28.18.37 (restricted access) | |||
| Last Update | 2018:09.28.18.37.10 (UTC) simone | |||
| Metadata Repository | sid.inpe.br/mtc-m21c/2018/09.28.18.37.10 | |||
| Metadata Last Update | 2019:01.14.17.06.35 (UTC) administrator | |||
| DOI | 10.1088/2053-1591/aadeb7 | |||
| ISSN | 2053-1591 | |||
| Citation Key | FornariRMFTPPPA:2018:StDeEl | |||
| Title | Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films  | |||
| Year | 2018 | |||
| Access Date | 2024, May 18 | |||
| Type of Work | journal article | |||
| Secondary Type | PRE PI | |||
| Number of Files | 1 | |||
| Size | 1752 KiB | |||
| 2. Context | ||||
| Author | 1 Fornari, Celso Israel 2 Rappl, Paulo Henrique de Oliveira 3 Morelhão, S. L. 4 Fornari, Gabriel 5 Travelho, Jerônimo dos Santos 6 Pirralho, M. J. P. 7 Pena, F. S. 8 Peres, M. L. 9 Abramof, Eduardo | |||
| Resume Identifier | 1 2 8JMKD3MGP5W/3C9JJ37 3 4 5 8JMKD3MGP5W/3C9JHE7 6 7 8 9 8JMKD3MGP5W/3C9JGUH | |||
| ORCID | 1 0000-0003-1765-2999 2 3 0000-0003-1643-0948 4 5 6 7 8 0000-0002-6635-0244 | |||
| Group | 1 LABAS-COCTE-INPE-MCTIC-GOV-BR 2 LABAS-COCTE-INPE-MCTIC-GOV-BR 3 4 CAP-COMP-SESPG-INPE-MCTIC-GOV-BR 5 LABAC-COCTE-INPE-MCTIC-GOV-BR 6 7 8 9 LABAS-COCTE-INPE-MCTIC-GOV-BR | |||
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 Universidade de São Paulo (USP) 4 Instituto Nacional de Pesquisas Espaciais (INPE) 5 Instituto Nacional de Pesquisas Espaciais (INPE) 6 Universidade Federal de Itajubá (UNIFEI) 7 Universidade Federal de Itajubá (UNIFEI) 8 Universidade Federal de Itajubá (UNIFEI) 9 Instituto Nacional de Pesquisas Espaciais (INPE) | |||
| Author e-Mail Address | 1 celso.fornari@inpe.br 2 paulo.rappl@inpe.br 3 4 gabrielfornari@gmail.com 5 6 7 8 9 eduardo.abramof@inpe.br | |||
| Journal | Materials Research Express | |||
| Volume | 5 | |||
| Number | 11 | |||
| Pages | 116410 | |||
| History (UTC) | 2018-09-28 18:39:29 :: simone -> administrator :: 2018 2019-01-14 17:06:35 :: administrator -> simone :: 2018 | |||
| 3. Content and structure | ||||
| Is the master or a copy? | is the master | |||
| Content Stage | completed | |||
| Transferable | 1 | |||
| Content Type | External Contribution | |||
| Version Type | publisher | |||
| Keywords | bismuth telluride molecular beam epitaxy structural properties electrical properties | |||
| Abstract | In this work, bismuth telluridefilms are grown bymolecular beamepitaxy (MBE) on (111) BaF2 substrates, using stoichiometricBi2Te3 and additional Te solid sources.The growth dynamics and structural defects are investigated in detail as function of substrate temperature, Bi2Te3flux and extra Te supply, bymeans of atomic forcemicroscopy, Raman spectroscopy and reciprocal spacemapping.The growth rate increases linearly with theBi2Te3flux and the most appropriate conditions to grow high-quality Bi2Te3 single layers is found to be in a narrowwindowofMBEparameters. At low growth temperaturesTe clusters are formed, while the Te deficit increases with raising substrate temperature and decreasing deposition rate. It results in filmswithBi-richer phases due to the formation ofBi double layers in betweenBi2Te3 quintuple layers. The electronic transport properties are also studied by temperature dependent resistivity and Hall measurements. By properly changing the substrate temperature and/or the extra Te supply, the behavior of the films canvary frominsulating tometallicaswell as themajor carriers fromp- ton-type.Theelectronicphase diagram presented here provides a fast route to control the bulk conductance properties of bismuth telluride, which enables the production of intrinsic bulk insulating films. In addition, the results suggest the possibility of growing intrinsic sharp p-n junctions of Bi2Te3 by properly monitoring the occurrence of structural defects,which is the first step for practical applications of this topological insulatormaterial. | |||
| Area | FISMAT | |||
| Arrangement 1 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAC > Structural defects and... | |||
| Arrangement 2 | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Structural defects and... | |||
| Arrangement 3 | urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CAP > Structural defects and... | |||
| doc Directory Content | access | |||
| source Directory Content | there are no files | |||
| agreement Directory Content |
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| 4. Conditions of access and use | ||||
| Language | en | |||
| Target File | Fornari_2018_Mater._Res._Express_5_116410-1.pdf | |||
| User Group | simone | |||
| Reader Group | administrator simone | |||
| Visibility | shown | |||
| Read Permission | deny from all and allow from 150.163 | |||
| Update Permission | not transferred | |||
| 5. Allied materials | ||||
| Next Higher Units | 8JMKD3MGPCW/3ESGTTP 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3F2PHGS | |||
| Citing Item List | sid.inpe.br/bibdigital/2013/09.24.19.30 8 sid.inpe.br/mtc-m21/2012/07.13.14.57.50 7 sid.inpe.br/bibdigital/2013/09.22.23.14 3 | |||
| Dissemination | WEBSCI; PORTALCAPES; SCOPUS. | |||
| Host Collection | urlib.net/www/2017/11.22.19.04 | |||
| 6. Notes | ||||
| Empty Fields | alternatejournal archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel e-mailaddress format isbn label lineage mark mirrorrepository month nextedition notes parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate secondarykey secondarymark session shorttitle sponsor subject tertiarymark tertiarytype url | |||
| 7. Description control | ||||
| e-Mail (login) | simone | |||
| update | ||||